垂直腔面发射半导体激光器单管的光束质量研究  

Beam Quality of High Power Vertical Cavity Surface Emitting Laser Single Device

作　　者：崔锦江[1] 董宁宁[1] 徐建根[1] 许杰[2] 林涛 

机构地区：[1]中国科学院苏州生物医学工程技术研究所,江苏苏州215163 [2]南京理工大学,江苏南京210094 [3]江苏省医疗器械检验所,江苏南京210000

出　　处：《中国激光》2015年第B09期39-45,共7页Chinese Journal of Lasers

基　　金：江苏省自然科学基金（BK2012188）、江苏省产学研联合创新项目（BY2013034）、苏州市医疗器械与新医药专项（ZXY20J3005）、苏州市医疗器械与新医药专项（ZXY201429）、吉林省与中国科学院省院合作项目（2014SYHZ0005）

摘　　要：研究了大功率底发射垂直腔面发射激光器（VCSEL）单管器件光束质量，分析了电流、出光孔径、衬底厚度等因素对M^2因子、远场发散角、近场及远场光强分布等的影响。使用有限元的方法对不同电极及不同氧化孔径时有源区中电流密度的分布进行了计算，为了获得高功率、高光束质量的VCSEL器件，选择氧化孔径为650μm以及P面电极直径为580μm，在对电流进行有效限制的同时实现了有源区中电流密度的均匀分布，从而抑制远场光斑中边模的产生，改善了光束质量。To research the beam quality of high power vertical cavity surface emitting lasers （VCSELs） singledevices,the impact of the factors such as the current, the aperture, the substrate thickness on the Mz factor, the far field divergence angle, near field and far field intensity distributionsis analyzed. It＇sconcluded that, the current density of active area tends to be uniform with the increasing current until the current gets crowded, which inducesall partsemitting and has a circular symmetric beam distribution. The beam quality factor will be smaller with the improved beam quality. On the other hand, with the increasing aperture size of the active region, the lasing intensitydistribution becomes more uneven. While, beam quality will be worse with the increasing aperture size. For the effect of substrate thickness on the beam quality, all the factorsare considered, the optimum substrate thickness is about 100 μm. In order to obtain high power and high beam quality for the VCSELs single device, the oxidation diameter of 650 μm and P side electrode diameter of 580 μm are chosen, which can realize the uniform distribution of current density in the active region and the effective limits on current. This study provides a basis for looking for an effective method to improve the beam quality.

关 键 词：激光器 垂直腔面发射激光器 单管器件 光束质量 

分 类 号：TN248.4[电子电信—物理电子学]