硅基Ⅲ-Ⅴ族量子点激光器的发展现状和前景  

Quantum dot lasers on silicon substrate for silicon photonic integration and their prospect

作　　者：王霆[1] 张建军[1] Huiyun Liu 

机构地区：[1]中国科学院物理研究所,北京100190 [2]Department of Electrical and Electronic Engineering,University College London

出　　处：《物理学报》2015年第20期19-26,共8页Acta Physica Sinica

摘　　要：本文简要综述了硅基Ⅲ-Ⅴ族量子点激光器的研究进展.在介绍了量子点激光器的优势和发展后,重点介绍了近年来硅基、锗基Ⅲ-Ⅴ族量子点材料生长上的突破性进展及所带来的器件性能的大幅提高,如实现了锗基和硅基1.3μm InAs/GaAs量子点激光器的室温激射,锗基量子点激光器的阈值电流低至55.2 A/cm^2并可达60℃以上的连续激射,通过锗硅虚拟衬底,在硅基上实现了30℃下以16.6 mW的输出功率达到4600 h的激光寿命,这些突破性的进展为硅基光电子集成打开了新的大门.In this article,the recent progress of Ⅲ-Ⅴ quantum dot lasers on silicon substrates for silicon photonic integration is reviewed.By introducing various epitaxial techniques,room-temperature 1.3-μm InAs/GaAs quantum dot laser on Si,Ge and SiGe substrates have been achieved respectively.Quantum dot lasers on Ge substrate has an ultra-low threshold current density of 55.2 A/cm^2 at room temperature,which can operate over 60℃ in continuous-wave mode.Puthermore,by using the SiGe virtual substrate,at 30 ℃ and an output power of 16.6 mW,a laser lifetime of 4600 h has been reached,which indicates a bright future for the large-scale photonic integration.

关 键 词：半导体激光 激光材料 集成光学 光电子器件 

分 类 号：TN248[电子电信—物理电子学]