双面次级电子倍增效应向单面次级电子倍增效应发展规律的研究  

Research on the development mechanism:from two-sided multipactor to one-sided multipactor

作　　者：张雪[1,2] 王勇[1] 徐强[1,2] 

机构地区：[1]中国科学院电子学研究所,中国科学院高功率微波源与技术重点实验室,北京100190 [2]中国科学院大学,北京100049

出　　处：《物理学报》2015年第20期401-408,共8页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2013CB328901)资助的课题~~

摘　　要：次级电子倍增效应引起的输出窗失效问题往往给微波器件造成灾难性的影响,是限制微波器件功率进一步提升的瓶颈.以S波段高功率盒形窗为研究对象,针对盒形窗内无氧铜金属边界与陶瓷介质窗片相对的区域,建立了研究法向电场作用下次级电子倍增效应的Monte-Carlo模型.通过拟合这两种材料间双面次级电子倍增以及单面次级电子倍增效应的敏感曲线,对次级电子倍增发展特点进行详细分析,获得了金属与介质之间的次级电子由双面倍增向单面倍增演变的规律.Multipactor discharge always causes disastrous damage to a vacuum window in high power microwave system,which actually becomes a limiting factor for the output power of vacuum device.To explore the multipactor phenomenon of complicated pill-box window,the mulitpactor in normal field between the metal boundary and the window disk is studied.Through Monte Carlo（MC） simulations,the susceptive curve is fitted and analyzed.The secondary electrons＇ avalanche behavior under the normal RF field is discussed.It is noticed that the one-sided multipactor is excited within a very limited V_（rf）-f D region when two-sided multipactor is excited initially.The development condition from two-sided multipactor to the one-sided multipactor is proposed.Through analyzing and MC simulation,the condition is achieved.When the normal RF electric field can satisfy the phase focus conditions of one-sided multipactor,the two-sided multipactor will develop into one-sided multpactor and then reach a saturation value.Meanwhile,the initial effect of electrostatic field on one-sided multipactor is also discussed.On condition that two-sided multipactor can be excited,the number of secondary electrons can increase up to a saturation value when E_（dc0） is lower than the minimal saturate value of E_（dc）.When E_（dc0） is lager than the minimal saturate value of E_（dc） and in the E_（dc）/E_（rf） threshold of one-sided resonant multipactor,the number of secondary electrons can also increase to a saturate value.However,When E_（dc0） is lager than the minimal saturate value of E_（dc） but beyond the E_（dc）/E_（rf） threshold of one-sided resonant multipactor,secondary electrons will be suppressed.

关 键 词：盒形窗 双面次级电子倍增效应 单面次级电子倍增效应 

分 类 号：TN122[电子电信—物理电子学]