Composite behaviors of dual meminductor circuits  

作　　者：郑辞晏 于东升 梁燕 陈孟科 

机构地区：[1]School of Information and Electrical Engineering, China University of Mining and Technology [2]School of Mechanical Engineering, Huaihai Institute of Technology

出　　处：《Chinese Physics B》2015年第11期180-195,共16页中国物理B（英文版）

基　　金：supported by the Fundamental Research Funds for the Central Universities,China(Grant No.2013QNB28.)

摘　　要：This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connec- tions with different polarities. Based on the constitutive relations, two time-integral-of-flux （TIF） controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By uti- lizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.This paper focuses on analyzing the composite dynamic behaviors of two meminductors in serial and parallel connec- tions with different polarities. Based on the constitutive relations, two time-integral-of-flux （TIF） controlled meminductors are adopted to theoretically demonstrate the variation of memductance in terms of TIF, charge, flux, and current. By uti- lizing a floating memristor-less meminductor emulator, the theoretical analysis reported in this paper is confirmed via a PSPICE simulation study and hardware experiment. Good agreement among theoretical analysis, simulation, and hardware validation confirms that dual meminductor circuits in composite connections behave as a new meminductor with higher complexity.

关 键 词：composite behavior serial connection parallel connection meminductor 

分 类 号：TM54[电气工程—电器]