新型绝热微环谐腔型低功耗硅基调制器的设计  

Design of new type adiabatic micro-ring harmonic cavity low-power silicon modulator

作　　者：杨真[1] 

机构地区：[1]华东交通大学现代教育技术中心,南昌330013

出　　处：《激光技术》2015年第6期885-888,共4页Laser Technology

基　　金：江西省科技厅自然科学青年基金资助项目(20122BAB211040)

摘　　要：为了改进绝热微环谐腔型的结构、降低谐振腔腔体损耗,采用了基于绝热过渡曲线的设计方法,提出了新型载流子注入/抽取结构,进行了理论分析和实验验证,取得了绝热微环谐振腔的谐振峰线宽、消光比及频率响应参量数据,比较了其与传统微环谐振腔的损耗。结果表明,使用所设计的外半径为2μm的谐振腔的谐振峰线宽仅为普通微环谐振腔的29.5%,消光比为13.5d B,电阻电容限制带宽提高了4倍,10Gbit/s调制速率下能耗仅为5.1f J/bit。这一结果大幅改善了绝热微环谐振腔的频率响应特性,降低了功耗。对腔形和载流子注入/抽取结构的研究可以进一步改善绝热微环谐振腔的性能,推动低能耗器件研究的发展。For the purpose of improving the structure of adiabatic micro-ring resonator and reducing the resonator cavity loss,a new carrier injection / extraction structure was proposed based on adiabatic transition curve. After theoretical analysis and experimental verification,the data of resonant full wave at half maximum（ FWHM） of the adiabatic micro-ring resonator,extinction ratio and frequency response parameters were obtained and compared with the loss of a traditional micro-ring resonator.The results show that FWHM of the adiabatic ring with outer radius of 2μm is only 29. 5% of that of a traditional micro-ring,the constrained bandwidth of resistance and capacitance increases 4 times,extinction ratio is 13. 5d B and energy consumption is5. 1f J / bit under modulation speed of 10 Gbit / s. This research is helpful to improve the frequency response and reduce the power consumption of an adiabatic micro-ring resonator significantly. The study on adiabatic transition and carrier injection / extraction structure can further improve the performance of the adiabatic micro-ring,and push the development of low energy consumption research.

关 键 词：光学设计 硅基调制器 绝热过渡曲线 谐振腔 

分 类 号：TN761[电子电信—电路与系统]