等离子体刻蚀机静电吸盘温度控制方法仿真研究  

Simulation of Temperature Control for Electrostatic Chuck in Plasma Etching

作　　者：张泽明[1,2] 黄利平[1,2] 赵继丛 田凌[1,2] 

机构地区：[1]清华大学机械工程系,北京100084 [2]清华大学精密超精密制造装备及控制北京市重点实验室,北京100084

出　　处：《真空科学与技术学报》2015年第10期1196-1202,共7页Chinese Journal of Vacuum Science and Technology

基　　金：国家02重大科技专项(No.2011ZX02403-004)

摘　　要：在晶圆等离子刻蚀过程中,静电吸盘对调节和控制晶圆表面温度均匀性、保障晶圆加工质量起着重要作用。本文对静电吸盘的传热以及温度控制方法进行了仿真研究。首先对静电吸盘的结构和传热进行分析,将其简化为二维轴对称模型,并验证了模型的可靠性;然后研究了静电吸盘分区PID控制方法,分析了各PID参数对静电吸盘表面温度—时间响应特性的影响;最后引入试验设计方法,结合替代模型方法和遗传优化算法,对PID参数进行整定优化。结果表明,利用该简化的二维模型,可以在误差允许范围内,提高有限元计算的速率;同时本文提出的PID整定方法可有效提高PID参数整定效率,整定结果能够有效改善静电吸盘温度——时间响应特性。We addressed via simulation the proportional-integral-derivative（ PID） control of the temperature distribution of the electrostatic chuck in plasma etching of Si wafers,300 ~ 450 mm in diameter. First,the impact of the chuck structure,including the dielectric and heater layers,base and water-cooling channels,on the heat transfer was empirically simplified,mathematically modeled,and numerically simulated with finite element method. The simulated results show that the 2-D symmetric model works pretty well. Next,the influence of the multi-zone PID control variables,such as Kp,Kiand Kd,on the time evolution of the chuck＇s surface temperature in the central,middle and edge heating-zones was simulated. Finally,tuning of the PID controller was performed in design of experiment method combined with surrogate model and genetic optimization algorithm. The results show that the 2-D model greatly simplifies the simulation with allowable uncertainties,and the newly-developed PID tuning technique significantly increases the tuning efficiency and improves the time evolution of the chuck＇s surface temperature.

关 键 词：静电吸盘 温度控制 优化超拉丁立方设计 遗传算法 PID参数整定 

分 类 号：TP273[自动化与计算机技术—检测技术与自动化装置]