电化学刻蚀多孔硅阵列的形貌研究  

Morphology study of electrochemically etched silicon pore array

作　　者：陈婷婷[1] 顾牡[1] 于怀娜[2] 刘小林[1] 黄世明[1] 

机构地区：[1]同济大学物理科学与工程学院上海市特殊人工微结构材料与技术重点实验室,上海200092 [2]中国科学院上海应用物理研究所,上海200092

出　　处：《电子元件与材料》2015年第11期48-52,共5页Electronic Components And Materials

基　　金：国家自然科学基金项目(No.11475128;No.11375129;No.11475127);科学技术部国家重大科学仪器设备开发专项项目(No.2011YQ3001902);上海航天科技创新基金(No.SAST201445);中科院大科学装置开放研究项目"自组装技术与超高密度纳米阵列研究"资助

摘　　要：采用电化学刻蚀法在P型硅中制备多孔阵列结构。通过实验研究和理论分析，分别讨论硅片电阻率、电流密度、电解液组分对多孔硅形貌的影响。结果表明，在P型硅中电阻率决定了孔洞能否形成；改变电流密度，可以有效调控孔径大小；在电阻率30~50Ω＆#183;cm、电流密度20×10^–3A/cm^2的条件下，可以得到最优化多孔硅结构。通过模板引导法制备了高度有序的多孔硅阵列，孔径2.5μm，周期4μm。在电解液中添加十六烷基三甲基氯化铵（CTAC），反应生成的气泡更容易逸出，有利于改善多孔硅阵列形貌。研究成果为基于硅孔洞填充的像素化X射线闪烁转换屏的研制提供了必要的基础。Pore array was fabricated in P-type silicon wafers by electrochemical etching. By experimental research and theoretical analysis, influences of silicon resistivity, current density and electrolyte addition on pore formation were discussed. Results show that resistivity of P-type silicon is decisive in pore formation and pore diameter can be modulated by varied current density; silicon wafers with a resistivity of 30–50Ω＆#183;cm are optimal for pore formation with the current density being at 20×10^–3A/cm^2. With assistance of pattern guiding, ordered silicon pore arrays with uniform size are obtained. The pore diameter is 2.5μm and the periodic pitch is 4μm. Addition of Cetyltrimethylammonium Chloride （CTAC） into the electrolyte facilitates bubbles escaping and improves porous silicon morphologies. This research provides a valuable support for developing pixellated X-ray scintillation screen with high resolution.

关 键 词：电化学刻蚀 多孔硅阵列 形貌 孔径调控 模板引导 X射线转换屏 

分 类 号：TQ035[化学工程] TL816.1[核科学技术—核技术及应用]