抑弧层结构对高压熔断器熔断效果的影响  

Effect of structure of arc quenching layer on high voltage fuse

作　　者：李程峰 谢强 彭昌文 杨建 庞锦标 

机构地区：[1]中国振华集团云科电子有限公司,贵州贵阳550018

出　　处：《电子元件与材料》2015年第11期89-91,共3页Electronic Components And Materials

基　　金：贵州省科学技术基金资助项目(No.[2013]2302)

摘　　要：将不同结构的抑弧层使用在相同熔断器基片上,研究了不同结构对熔断器高压电弧猝灭效果的影响。结果表明:熔断器动作时高压电弧的猝灭与抑弧层结构密切相关,多孔的抑弧层结构更有利于电弧的及时猝灭,对抑弧层中孔洞结构进行优化后熔断器电弧猝灭时间能够缩短至3 ms以内,电弧猝灭后的绝缘电阻大于500 M?,能达到较好的切断电流的目的。Arc-quenching properties of high voltage fuses with different structures of arc-quenching layer were investigated. The results show that the quenching effect of high voltage electrical arc is closely related to the structure of arc-quenching layer, the porous structure is more preferred in the arc-quenching layer. After the optimization of the porous structure, the arc-quenching time could be decreased to less than 3 ms, the insulation resistance is greater than 500 MΩ after open circuit for the fuse.

关 键 词：熔断器 抑弧层 抑弧性能 过流保护 SMD 多孔材料 

分 类 号：TM212[一般工业技术—材料科学与工程]