GaAs晶体坩埚下降法生长及掺杂效应  

Growth and Doping Effects of GaAs Crystals by the Pulling-down Method

作　　者：徐家跃[1] 王冰心[1] 金敏[1] 房永征[1] 

机构地区：[1]上海应用技术学院材料科学与工程学院,上海201418

出　　处：《人工晶体学报》2015年第10期2632-2640,共9页Journal of Synthetic Crystals

基　　金：上海市人才发展基金(405ZK100012);上海市科委项目(09530500800)

摘　　要：作为第二代半导体材料,Ga As晶体自60年前被发现以来已广泛应用于激光、通讯和显示等领域,并发展出液封提拉法、水平布里奇曼法、垂直梯度凝固法等多种生长工艺。本文总结了Ga As晶体的最新研究进展,探讨了各种生长方法的特点及其应用,重点报道了Ga As晶体坩埚下降法生长的研究成果。坩埚下降法具有一炉多产、易操作、低成本等优点,已成为Ga As晶体产业化的重要途径。掺杂不仅能调节Ga As晶体的性能,还会对晶体生长产生重要影响。本文还给出了Bi、Si、Zn等掺杂Ga As晶体生长结果,探讨了它们的性能、缺陷以及在不同领域里的应用。GaAs crystal as the 2nd generation semiconductor has been discovered almost 60 years and now has been applied comprehensively in laser, communication and display. GaAs crystals have been successfully grown by Liquid Encapsulated Czochralski （LEC）, Horizontal Bridgman method （HB）, Vertical Gradient Freezing method（VGF） and other techniques. In this paper, recent progress of GaAs crystals were reviewed, including growth techniques, properties and industrial applications. The development of GaAs crystals by the pulling-down method is focused on. This method shows some advantages, such as multi-crucible, easy operation, low cost, therefore becomes an industrial growth method. The properties of GaAs crystals can be modified by doping, however it may result in a series of growth problems. The growth results and applications of GaAs crystals doped with Bi, Si, Zn were reported, respectively.

关 键 词：坩埚下降法 晶体生长 砷化镓晶体 掺杂 

分 类 号：O781[理学—晶体学]