温度对草酸钴腐蚀人造金刚石单晶的影响  

Effect of Temperature on the Etching of Single Crystal Synthetic Diamond by Cobalt Oxalate

作　　者：周肖璇 万隆[1,2] 陈静[1,2] 王俊沙[1] 宋冬冬[1] 张磊欣 

机构地区：[1]湖南大学材料科学与工程学院,长沙410082 [2]湖南大学喷射沉积技术及应用湖南省重点实验室,长沙410082

出　　处：《人工晶体学报》2015年第10期2664-2669,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51375157)

摘　　要：在氢、氮混合气氛条件下,采用草酸钴对人造金刚石单晶进行表面腐蚀,利用扫描电镜和显微拉曼光谱对腐蚀后的金刚石进行了表面形貌、腐蚀深度和腐蚀前后结构成分的研究,分析了温度对草酸钴腐蚀金刚石的影响及腐蚀图案的各向异性,并对腐蚀机理做出推理。结果表明:温度的升高会促进金刚石{111}面和{100}面的腐蚀;相比较而言,{100}面比{111}面更易腐蚀;{111}面的腐蚀坑形状多呈六边形和三角形,{100}面倾向于形成四边形。腐蚀有三种可能的机制:(1)金刚石在草酸钴分解出的钴作用下发生石墨化并在钴中扩散;(2)金刚石碳原子在氢气气氛中氢化并扩散;(3)金刚石碳原子和草酸钴分解出的水和二氧化碳发生氧化还原。The etching of single crystal synthetic diamond by cobalt oxalate in a streaming mixed gas（ QN2 =2.7 L/rain, QH2 = 1 L/rain） was presented. The surface morphology, surface roughness and the material composition of the processed diamond were investigated by scanning electron microscopy and micro-raman spectrosopy. The effect of temperature on the etching and the anisotropy were analyzed. In addition, the mechanism of the etching was introduced by inference. The results show that the etching rate of { 100 } and { 111 } plane increases as the temperature increasing, and that the { 100 } plane was etched more easily than { Ⅲ }. The etching pits of the { Ⅲ } were approximate triangulars or hexagonals, while the etching pits of the { 100 } were more quadrilaterals. It was demonstrated by the following mechanisms ： （1） Diamond graphitization and subsequent carbon diffusion in cobalt which results from the decomposition of cobalt oxalate, （2） diamond hydrogenated carbon diffusion ; （3） The carbon oxidation and reduction with the water and carbon dioxide.

关 键 词：草酸钴 人造金刚石单晶 腐蚀 

分 类 号：TG74[金属学及工艺—刀具与模具]