旋转半径对KDP晶体生长过程影响的数值模拟研究  

Numerical Simulation Research of the Crystal Growth Process of KDP with Different Rotation Radius

作　　者：张小莉[1] 程旻[1] 康道远 杨森[1] 刘希夏 

机构地区：[1]重庆大学动力工程学院低品位能源利用技术及系统教育部重点实验室,重庆400030

出　　处：《人工晶体学报》2015年第10期2721-2727,共7页Journal of Synthetic Crystals

基　　金：中央高校基本科研业务费(CDJZR13140015)

摘　　要：相比传统KDP晶体同心旋转的生长方式,本文利用数值模拟的方法,针对不同旋转半径和不同籽晶摆放方式对KDP晶体生长过程中溶液流动和物质输运的影响进行研究,以寻找提高晶体表面过饱和度及其均匀性的方法。计算结果表明:随着旋转半径从0 cm增大到3 cm,晶面时均过饱和度整体也逐渐增大,柱面平均均方差逐渐减小,锥面平均均方差先增大后减小;当晶体摆放方式采用棱边迎流时,晶体表面时均过饱和度相比柱面迎流略有下降,但其平均均方差最小,有利于减少包裹体的产生。Comparing with traditional concentric rotation method, numerical simulation of solution tlow and mass transfer in the growth process of potassium dihydrogen phosphate （KDP） with different rotation radii and different crystal laying modes were carried out. The purpose of the research is to find methods to increase the surface supersaturation and improve the uniformity of the crystal surface supersaturation. The results show that the supersaturation in all the crystal surfaces increases as the rotation radius increasing from 0 cm to 3 em. At the same time, the average standard deviation of prismatic face decreases as the rotation radius increasing, and the average standard deviation of pyramidal face firstly increases and then decreases as the rotation radius increasing. In addition, although the surface supersaturation of crystal which used the laying mode named ＂ edge incident flow＂ was a little lower than the condition of ＂ prismatic face incident flow＂ , the average standard deviation was minimum when the crystal laying mode was ＂edge incident flow＂. And it is useful to reduce the generation of inclusions.

关 键 词：KDP晶体 数值模拟 旋转半径 表面过饱和度 均方差 

分 类 号：O734[理学—晶体学]