Sn自溶剂含量对Al掺杂VIII型Sn基单晶笼合物电传输特性的影响  

Effects of Sn-flux Content on the Electric Transmission Properties of Al-doped Sn-based Type-VIII Single Crystalline Clathrate

作　　者：申兰先[1] 李德聪[2] 刘虹霞[1] 刘祖明[1] 邓书康[1] 

机构地区：[1]云南师范大学太阳能研究所可再生能源材料先进技术与制备教育部重点实验室云南省农村能源工程重点实验室,昆明650500 [2]云南开放大学光电工程学院,昆明650500

出　　处：《人工晶体学报》2015年第10期2810-2814,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51262032)

摘　　要：通过Sn自熔剂法制备了Al掺杂VIII型Sn基单晶笼合物Ba8Ga10Al6Snx（x=40,50,60;Sn40,Sn50,Sn60）,并研究Ba8Ga10Al6Snx单晶笼合物的结构和电传输特性对自熔剂Sn初始含量的依赖性。结果表明,Al的实际含量随Sn自熔剂含量的增加而基本保持不变,说明Sn的起始含量对Al在该笼合物中固溶度的影响较小;室温下Sn60样品的载流子浓度较高,这可能是因Al在笼合物Ga8Ga16Sn30中的占位不同而导致费米能级附近能带色散关系发生变化所引起;另一方面,在300~600 K的温度范围内,获得较高功率因子的是Sn初始含量为50的样品,在488 K处获得最大值1.82×10-3W·m-1·K-2;获得较低功率因子的是Sn初始含量为40的样品,而功率因子较低主要是由于该样品电导率较低。The Al-doped type-VIII Sn-based single crystalline clathrate Ba8Ga10A16Snx （x = 40,50,60; Sn40, Sn50, Sn60） were grown by Sn-flux method, and the effects of Sn starting content on the structure and electronic properties of the clathrates Ba8Ga10A16Snx were investigated. The research results show that the Al actual content in the samples almost keep invariable with the increase of Sn starting content, which suggests that the effects of the starting content of Sn on the solid soluhihty of A1 in the samples is very unconspicuous; At room tenaperature, Sn60 sample has higher carrier eonceatration, this may be due to the difference of the location and distribution of A1 atomic in compound Ga8Ga16Sn30, and which leads to differences in density of States near the Fermi. In addition, in 300-600 K SnS0 sample has higher power factor, and Sn40 samples has lower power factor due to the higher resistivitv, and a maximum power factor of 1,82 × 10-3 W · m 1 . K-2 for Sn50 is obtained at about 488 K.

关 键 词：VIII型笼合物 Sn基笼合物 电传输特性 

分 类 号：TQ174[化学工程—陶瓷工业]