InP基少模半导体激光器  

InP-Based Few Lateral-Modes Semiconductor Laser

作　　者：张莉萌 陆丹[1] 余力强[1] 潘碧玮 赵玲娟[1] 

机构地区：[1]中国科学院半导体研究所材料重点实验室,北京100083

出　　处：《光学学报》2015年第A02期16-19,共4页Acta Optica Sinica

基　　金：国家973计划（2014CB340102）、国家自然科学基金（61274045,61321063）

摘　　要：针对少模光通信需求，仿真设计并制作了一种基于压应变量子阱结构的少模激光器。通过调整工作电流，该器件可以实现基模和一阶模工作。利用该器件成功激发了少模光纤的LR01模和LP11模。这种器件制作方法简单、成本低、易于集成，可作为少模通信系统的光源，为空分复用系统中发射端的集成化提供了可能。To meet the demand for the few-modes optical communication system, a few-mode semiconductor laser based on the compressive strain quantum well structure in InP/InGaAsP materials is designed and manufactured. The device can work in the fundamental mode and the 1st order lateral mode depending on the injection current level. The LPo1 or the LP11 modes of a few mode fiber is successfully excited by the few-modes laser. The device is easy to be implemented with low production costs, which provides a new light source choice for few-modes optical communication system. Also this device gives a possibility to realize the integrated emitter in the space division multiplex system.

关 键 词：光通信 半导体激光器 模式 光学器件 

分 类 号：O436[机械工程—光学工程]