铟掺杂近化学计量比铌酸锂单晶的缺陷结构  

Defect structure of near-stoichiometric LiNbO_3 crystals doped with indium

作　　者：方双全[1] 黄新[1] 马德才[2] 张贺新[3] 

机构地区：[1]扬州大学机械工程学院,江苏扬州225127 [2]中山大学物理与工程学院,广东广州510275 [3]哈尔滨工程大学材料科学与化学工程学院,黑龙江哈尔滨150001

出　　处：《哈尔滨工程大学学报》2015年第10期1409-1412,共4页Journal of Harbin Engineering University

基　　金：国家自然科学基金资助项目(11372361);扬州大学科技创新培育基金资助项目(2013CXJ020)

摘　　要：为了探讨抗光损伤介质在近化学计量比铌酸锂晶体中的占位机制,采用顶部籽晶助熔剂方法（TSSG）生长了不同铟含量的近化学计量比铌酸锂（In：SLN）晶体,利用X射线衍射、差热分析,紫外-可见吸收光谱及红外光谱测试并研究了晶体中的缺陷结构变化规律。分析发现在近化学计量比铌酸锂晶体中,In2O3的阈值浓度介于1%~1.5%。缺陷结构研究表明,当In2O3掺杂量低于阈值浓度时,In^3＋离子优先取代NbLi^4＋,形成InLi^2＋离子;当In2O3掺杂浓度高于阈值浓度时,In^3＋离子开始同时占据正常的Li与Nb位,形成InLi^2＋-InNb^2-电荷自补偿结构。In order to investigate the occupation mechanism of anti-photo-damage media in the near-stoichiometric Li Nb O3 crystals,the near-stoichiometric In： Li Nb O3（ In： SLN） crystals with different indium contents were grown by the top seed solution growth（ TSSG） method. The defect structure evolution was derived from the X-ray powder diffraction,differential thermal analysis（ DTA）,ultraviolet-visible（ UV） absorption and infrared（ IR） spectrum measurement. The analysis implies that the threshold concentration of In2O3 in near-stoichiometric Li Nb O3 crystals was between 1% and 1. 5%. The investigation of defect structure indicates that In3＋ions first replace NbLi^4＋to obtain In^2＋Liions when the doping content of In2O3 is less than the threshold concentration. Conversely,In^3＋ions begin to occupy normal Li and Nb sites to obtain InLi^2＋-InNb^2-compensation structure when the In2O3 doping content is more than the threshold concentration.

关 键 词：铌酸锂晶体 近化学计量比 缺陷结构 取代机理 阈值 铟 

分 类 号：O782[理学—晶体学]