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出 处:《吉林师范大学学报(自然科学版)》2015年第4期25-28,共4页Journal of Jilin Normal University:Natural Science Edition
基 金:四平市科技发展计划项目(四科合字第2014053号)
摘 要:采用放电等离子烧结(SPS)方法在1 800℃制备了不同类型碳化硅(Si C)的BAS/Si C陶瓷基复合材料.采用阿基米德排水法、XRD、SEM及三点弯曲等分析测试手段研究了复合材料的致密度、物相组成、显微结构及室温力学性能.实验结果表明,BAS能有效地促进复合材料的致密化.复合材料中没有发生β-Si C→α-Si C相的转变.Si C晶粒均匀地分散在连续的BAS晶相中,且与BAS之间结合紧密.与以α-Si C为原始粉体制备的复合材料的室温抗弯强度相比,β-Si C为原始粉体制备的复合材料的室温抗弯强度提高13.93%.BAS / Si C ceramics matrix composites were synthesized with different Si C type by sparking plasma sintering( SPS) at 1800℃. Densification,phase composition,microstructure and room-temperature mechanical properties of the BAS / Si C composites were studied by means of Archimedes' principle,XRD,SEM and threepoint bending methods. The results showed the BAS could benefit densification of the composites. XRD analysis showed no phase transformation happened from β-Si C to α-Si C. Si C grains uniformly dispersed in the continuous BAS grains with good bond. The flexural strength of the BAS / Si C composites sintered by original β-Si C powders was increased by 13. 93% in comparison with that of α-Si C composites.
分 类 号:TB332[一般工业技术—材料科学与工程]
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