p-n结结深对台面型InSb光伏型探测器性能的影响  

Effects of p-n Junction Depth on the Performance of Mesa InSb Photovoltaic Detector

作　　者：马京立 杨翠[1] 张小雷[2] 孟超[2] 吕衍秋[2] 司俊杰[2] 

机构地区：[1]西安电子科技大学物理与光电工程学院,西安710071 [2]中国空空导弹研究院,河南洛阳471009

出　　处：《航空兵器》2015年第5期36-40,共5页Aero Weaponry

基　　金：航空科学基金项目(20122481002);国家自然科学基金项目(61307121)

摘　　要：基于Silvaco二维数值仿真研究了p-n结结深对台面型In Sb光伏型探测器串音和量子效率的影响,通过分析探测器中横向电场分布、纵向电场分布、复合速率分布等与p-n结结深的相关性,揭示了p-n结结深影响探测器的串音和量子效率的内在物理机制,并获得了对探测器优化设计有指导意义的研究结论。Based on Silvaco 2D numerical simulation,the effects of p-n junction depth on the crosstalk and quantum efficiency of the mesa In Sb photovoltaic detector are studied. The correlation between the longitudinal electric field distribution,the transverse electric field distribution,as well as the recombination rate of detector and the p-n junction depth are analyzed. The results show that the p-n junction depth has a profound effect on the inherent physical mechanisms of the crosstalk and the quantum efficiency. And it is of great importance to the optimization of the mesa In Sb photovoltaic detector.

关 键 词：InSb光伏型探测器 p-n结结深 串音 量子效率 

分 类 号：TJ765.333[兵器科学与技术—武器系统与运用工程] TN215[电子电信—物理电子学]