p型InGaN/GaN超晶格N面GaN基LED的光电特性  

Optoelectronic Properties for N-Face GaN LED with p-Type InGaN/GaN Superlattice

作　　者：姚楚君[1] 杨国锋[1] 孙锐[1] 许桂婷 李月靖 蔡乐晟 

机构地区：[1]江南大学理学院江苏省轻工光电工程技术研究中心,江苏无锡214122

出　　处：《半导体技术》2015年第11期820-824,839,共6页Semiconductor Technology

基　　金：中国博士后科学基金资助项目(2014M561623;2014M551559);江苏省博士后科研资助计划(1401013B);中央高校基本科研业务费专项资金资助项目(JUSRP11408;JUSRP51517)

摘　　要：随着氮(N)面Ga N材料生长技术的发展,基于N面Ga N衬底的高亮度发光二极管(LED)的研究具有重要的科学意义。研究了具有高发光功率的N面Ga N基蓝光LED的新型结构设计,通过在N面LED的电子阻挡层和多量子阱有源层之间插入p型In Ga N/Ga N超晶格来提高有源层中的载流子注入效率。为了对比N面Ga N基LED优异的器件性能,同时设计了具有相同结构的Ga面LED。通过对两种LED结构的电致发光特性、有源层中能带图、电场和载流子浓度分布进行比较可以发现,N面LED在输出功率和载流子注入效率上比Ga面LED有明显的提升,从而表明N面Ga N基LED具有潜在的应用前景。With the development of N-face Ga N materials growth techniques, the research on N-face Ga N light-emitting diodes（ LEDs） with high-brightness has important scientific significance.The high luminous power N-face Ga N-based blue LED with novel structural design was investigated. A ptype In Ga N/Ga N superlattice layer has been inserted between the electron blocking layer and multiple quantum well active layer to improve the carrier injection efficiency. A Ga-face LED with the same structure was simultaneously designed for comparison with the enhanced performance of the designed N-face Ga N-based LED. By comparing the electroluminescent characteristics,the energy band diagrams in the active layer,the distribution of the electric field and carrier concentrations of the two kinds of LED structures,it can be found that the Ga-face LED has obvious improvement compared with the N-face LED for the output power and carrier injection efficiency. It shows that the N-face Ga N-based LED has potential application prospect.

关 键 词：N面GaN 发光二极管 极化效应 InGaN/GaN超晶格 载流子注入效率 

分 类 号：TN312.8[电子电信—物理电子学]