Modeling and simulation of single-event effect in CMOS circuit  

作　　者：岳素格 张晓林 赵元富 刘琳 王汉宁 

机构地区：[1]Beijing University of Aeronautics & Astronautics [2]Beijing Microelectronics Technology Institute

出　　处：《Journal of Semiconductors》2015年第11期15-24,共10页半导体学报（英文版）

摘　　要：This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.

关 键 词：single event effect（SEE） charge collection single event upset（SEU） multi-node upset（MNU） 

分 类 号：TN432[电子电信—微电子学与固体电子学] V443[航空宇航科学与技术—飞行器设计]