Simulation and research on a 4T-cell based duplication redundancy SRAM for SEU radiation hardening  

作　　者：洪新红 潘立阳 张文帝 纪冬梅 伍冬 沈忱 许军 

机构地区：[1]Institute of Microelectronics, Tsinghua University [2]Cogenda Co Ltd

出　　处：《Journal of Semiconductors》2015年第11期34-38,共5页半导体学报（英文版）

摘　　要：A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size.A novel 4T-cell based duplication redundancy SRAM is proposed for SEU radiation hardening applications. The memory cell is designed with a 65-nm low leakage process; the operation principle and the SEU radiation hardening mechanism are discussed in detail. The SEE characteristics and failure mechanism are also studied with a 3-D device simulator. The results show that the proposed SRAM structure exhibits high SEU hardening performance with a small cell size.

关 键 词：SRAM SEE SEU radiation hardening 3-D simulation 

分 类 号：TP333[自动化与计算机技术—计算机系统结构] Q987.1[自动化与计算机技术—计算机科学与技术]