Effect of parameters on Si plasma emission in collinear double-pulse laser-induced breakdown spectroscopy  

作　　者：Fang-Fang Chen Xue-Jiao Su Wei-Dong Zhou 

机构地区：[1]Key Laboratory of Optical Information Detection and Display Technology of Zhejiang, Zhejiang Normal University, Jinhua 321004, China

出　　处：《Frontiers of physics》2015年第5期83-90,共8页物理学前沿（英文版）

基　　金：This study was supported by the Na- tional Natural Science Foundation of China （Grant No. 61178034）, the Natural Science Foundation of Zhejiang Province （Grant No. LY14F050003）, and was partially supported by the Program for Innovative Research Team, Zhejiang Normal University, China.

摘　　要：Collinear dual-pulse laser-induced breakdown spectroscopy was carried out on Si crystal by using a pair of nanosecond Nd：YAG laser sources emitting at 1064 nm. The spectral intensities and signal- to-noise ratios of selected Si atomic and ionic lines were used to evaluate the optical emission. The optical emission intensity was recorded while varying the interpulse delay time and energy ratio of the two pulsed lasers. The effects of the data acquisition delay time on the line intensity and signal-to-noise ratio have been investigated as well. Based on the results, the optimal interpulse delay time, energy ratio of the two pulsed lasers, and data acquisition delay time for achieving the maximum atomic and ionic line intensities were found for generation of Si plasma with the collinear dual-pulse laser approach. The dominant mechanism for the observed line intensity variation was also discussed. In addition, the plasma temperature and electron number density at different gate delay times and different interpulse delay times were derived. A significant influence of plasma shielding on the electron temperature and electron number density at shorter interpulse delay times was observed.Collinear dual-pulse laser-induced breakdown spectroscopy was carried out on Si crystal by using a pair of nanosecond Nd：YAG laser sources emitting at 1064 nm. The spectral intensities and signal- to-noise ratios of selected Si atomic and ionic lines were used to evaluate the optical emission. The optical emission intensity was recorded while varying the interpulse delay time and energy ratio of the two pulsed lasers. The effects of the data acquisition delay time on the line intensity and signal-to-noise ratio have been investigated as well. Based on the results, the optimal interpulse delay time, energy ratio of the two pulsed lasers, and data acquisition delay time for achieving the maximum atomic and ionic line intensities were found for generation of Si plasma with the collinear dual-pulse laser approach. The dominant mechanism for the observed line intensity variation was also discussed. In addition, the plasma temperature and electron number density at different gate delay times and different interpulse delay times were derived. A significant influence of plasma shielding on the electron temperature and electron number density at shorter interpulse delay times was observed.

关 键 词：laser-induced breakdown spectroscopy collinear dual-pulse plasma emission intensity 

分 类 号：TN248.5[电子电信—物理电子学] TL631.24[核科学技术—核技术及应用]