KrF脉冲激光退火制备锐钛矿TiO_2薄膜  

Fabrication of anatase TiO_2 film by KrF pulse laser annealing

作　　者：张自锋[1] 张志威[1] 洪荣墩[1] 陈厦平[1] 吴正云[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《量子电子学报》2015年第6期673-677,共5页Chinese Journal of Quantum Electronics

基　　金：国家自然科学基金资助项目(61176049;61307047)

摘　　要：在常温下,用射频磁控溅射在石英衬底上沉积厚度约为200 nm的TiO_2薄膜,使用波长为248 nm的KrF脉冲激光器,在不同功率密度下对薄膜样品进行辐照退火处理,并采用X射线衍射(XRD)、拉曼(Raman)、X射线电子能谱(XPS)、原子力显微镜(AFM)、扫描电子显微镜(SEM)、高分辨率扫描隧道显微镜(HRTEM)以及选择区域电子衍射(SAED)、紫外可见分光光度计等方法分析不同激光功率密度退火对TiO_2薄膜的结构、表面形貌和透射率等性能的影响。结果表明当激光功率密度为0.5 J/cm^2时,可获得高质量的锐钛矿TiO_2薄膜,当继续增大光功率密度时,TiO_2薄膜变为(110)取向的金红石相,其薄膜表面粗糙度也相应增大。TiO2 thin films of about 200 nm thickness were prepared by RF magnetron sputtering on quartzsubstrates at room temperature, and then annealed by a KrF pulse laser with wavelength 248 nm underdifferent power densities in the air. The effect of laser power density on the characteristics of films was sys-tematically analyzed using X-ray diffractometry （XRD）, Raman spectra, X-ray photoelectron spectroscopy（XPS）, scanning electron microscopy （SEM）, atom force microscopy （AFM）, high resolution transmissionelectron microscopy （HRTEM） and selected area electron diffraction （SAED） and UV-vis spectrophotome-ter. The results showed that high-quality anatase TiO2 films can be obtained when the power density was0.5 J/cm2. By increasing the power density continually, TiO2 showed the predominant orientation withrutile phase along （1 1 0） refiection, with roughness of the films increasing.

关 键 词：激光技术 KrF脉冲激光 薄膜 TiO2 光学特性 

分 类 号：TB303[一般工业技术—材料科学与工程]