Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor  

作　　者：唐晓雨 卢继武 张睿 吴枉然 刘畅 施毅 黄子乾 孔月婵 赵毅 

机构地区：[1]School of Electronic Science and Engineering, Nanjing University, Nanjing 210093 [2]Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027 [3]Nanjing Electronic Devices Instit ute, Nanjing 210016 [4]State Key Laboratory of Silicon MateriMs, Zhejiang University, Hangzhou 310027

出　　处：《Chinese Physics Letters》2015年第11期127-130,共4页中国物理快报（英文版）

基　　金：Supported by the National Program on Key Basic Research Project of China under Grant No 2011CBA00607;the National Natural Science Foundation of China under Grant Nos 61106089 and 61376097;the Zhejiang Provincial Natural Science Foundation of China under Grant No LR14F040001

摘　　要：Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.Ultra-thin-body （UTB） In0.53Ga0.47As-on-insulator （In0.53Ga0.47As-OI） structures with thicknesses of 8 and 15nm are realized by transferring epitaxially grown In0.53Ga0.47As layers to silicon substrates with 15-nmthick A12 03 as a buried oxide by using the direct wafer bonding method. Back gate n-channel metal-oxidesemiconductor field-effect transistors （nMOSFETs） are fabricated by using these In0.53Ga0.47As-OI structures with excellent electrical characteristics. Positive bias temperature instability （PBTI） and hot carrier injection （HCI） characterizations are performed for the In0.53Ga0.47As-OI nMOSFETs. It is confirmed that the In0.53Ga0.47 As-OI nMOSFETs with a thinner body thickness suffer from more severe degradations under both PBTI and HCr stresses. Moreover, the different evolutions of the threshold voltage and the saturation current of the UTB In0.53Ga0.47As-OI nMOSFETs may be due to the slow border traps.

关 键 词：As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor OI Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In Ga 

分 类 号：TN386[电子电信—物理电子学] TP332[自动化与计算机技术—计算机系统结构]