铜片氧化法制备Cu_2O层厚度的调控方法  

Study of Controlling Cu_2O Thickness by Oxidation Method

作　　者：蒋盼[1] 彭坤[1] 周灵平[1] 朱家俊[1] 李德意[1] 

机构地区：[1]湖南大学材料科学与工程学院,长沙410082

出　　处：《材料导报》2015年第20期114-117,共4页Materials Reports

基　　金：国家自然科学基金(51401080)

摘　　要：采用氧化法在铜片上生成氧化亚铜,研究氧化工艺对氧化亚铜厚度的影响规律,利用X射线衍射仪和扫描电镜分别对氧化产物和氧化层厚度进行表征。无氧铜片在900～1050℃,氧气体积分数为2%～10%条件下氧化可在表面生成一层纯的Cu2O层;当氧化温度和氧气体积分数分别是1000℃和4%时,生成致密的Cu2O层,且厚度易于控制,氧化层厚度（ζ）与时间（t）的关系满足抛物线关系ζ^2=194t-955。Cuprous oxide was produced on copper by oxidation method and the influences of oxidation parameters on the oxidation thickness was investigated systematically in this paper.The oxidation thickness and product were characterized respectively by scanning electron microscopy（SEM）and X-ray diffraction（XRD）.The pure Cu2 O can be obtained at a certain temperature range of 900-1050 ℃ under 2%-10% O2 volume fraction.When the oxidation temperature and O2 volume fraction were 1000℃ and 4% respectively,the dense oxide layer can be obtained and the relation between thickness and time meet the parabolic law：ζ^2=194t-955.

关 键 词：直接覆铜法 氧化 氧化亚铜 厚度 

分 类 号：TQ174[化学工程—陶瓷工业]