Al掺杂TiO_2薄膜对DSSCs的I-V特性的影响  

Effect of Al-doped TiO_2 thin films on I-V properties of DSSCs

作　　者：曾礼丽[1] 李伯勋[1] 

机构地区：[1]湖南理工职业技术学院,湖南湘潭401114

出　　处：《电源技术》2015年第11期2412-2413,2452,共3页Chinese Journal of Power Sources

基　　金：湖南省教育厅科学研究项目(13C377)

摘　　要：利用磁控共溅射法,在不同溅射功率下向Ti O2薄膜中掺Al,研究了Ti O2薄膜层光学性质、晶体结构和禁带宽度的变化。将Al-Ti O2薄膜浸入N719染料,制备成染料敏化太阳电池,测试电池的I-V特性,结果表明:Ti O2半导体层的禁带宽度与染料敏化太阳电池的开路电压有相同的变化趋势;掺Al后,太阳电池的短路电流及光电转换效率均有所提高,在掺铝功率为5 W时尤为显著。AI was doped into TiO2 thin films by magnetron sputtering with different sputtering power. The optical properties, crystal structure and the changes of band gap of TiO2 were researched. N-doped TiO2 thin films were immersed to prepare dye-sensitized solar cells with N719. By testing the I-V properties of solar cells, the change tendency of band gap of TiO2 films is similar to that of the open-circuit voltage （Vow）. After AI-doped, both short-circuit current and photoelectric conversion efficiency are improved, especially the sputtering power of 5 W.

关 键 词：染料敏化太阳电池 掺Al 开路电压 禁带宽度 

分 类 号：TM914.4[电气工程—电力电子与电力传动]