硫系非晶薄膜的光致能隙变化及相关机理研究进展  

Recent Studies on Photo-Induced Energy-Gap Changes and the Mechanism on Amorphous Chalcogenide Films

作　　者：陈国荣[1] 

机构地区：[1]华东理工大学材料科学与工程学院无机材料研究所,上海200237

出　　处：《硅酸盐学报》2015年第11期1531-1549,共19页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金项目(51072052,51572081);高等学校博士学科点(博导类)专项科研基金项目(20120074110018)

摘　　要：以硒基硫系非晶薄膜的光诱导效应开展的研究工作为基础,对硫系薄膜光致能隙变化的可调节性和稳定性及相关机理等方面的最新研究进展进行了综述,重点阐述了GexAs45–xSe55系列非晶薄膜的光致暗化和光致漂白效应与组成之间的相关关系,GexSe100–x系统富硒和富锗组成薄膜的光致漂白效应及机理,光致氧化效应对Ge Se2/Ge2Se3非晶薄膜光致能隙变化的影响,以及氧掺杂对Ge–Se系统非晶薄膜光致漂白行为的影响。This paper summarized recent studies on the photo-induced effects on the energy-gap of selenium based chalcogenide films, the adjustable photo-induced energy-gap changes, photo-stability and the relevant mechanism. The studies involve the relationship between film composition and photo-darkening/bleaching effects in the GexAs45–xSe55 system, photo-bleaching effects on GexSe100–x films ranging from Se-rich to Ge-rich compositions, photo-oxidizing effects on photo-induced energy-gap changes of the Ge Se2/Ge2Se3 films as well as effects of oxygen-doping on photo-bleaching behaviors of films in the Ge–Se system.

关 键 词：硒基硫系非晶薄膜 光致能隙变化 光稳定性 光致氧化效应 

分 类 号：TQ171.73[化学工程—玻璃工业]