高低温冷阱富集分离SF_6典型分解产物实验研究  

Experimental Study on the Separation and Enrichment for Typical Decomposition Products of SF_6 with High and Low Temperature Trap

作　　者：赵锋[1] 李胜利[2] 李晋城[1] 王小希[2] 崔红梅[1] 吴鹏飞[2] 喻培元 

机构地区：[1]国网河南省电力公司济源供电公司,济源459000 [2]华中科技大学环境科学与工程学院,武汉430074

出　　处：《高电压技术》2015年第11期3866-3871,共6页High Voltage Engineering

基　　金：国家自然科学基金(51077062)~~

摘　　要：气体绝缘开关设备(GIS)中SF6在局部放电的情况下会产生分解产物,其含量通常远低于SF6的含量,用气相色谱法很难进行有效的检测。为提高这些分解产物的含量,根据SF6与SO2F2、SOF2及SF4不同的熔点和沸点,以质量为2 g的硅胶作为吸附剂,设计了1套高低温冷阱实验方案,利用此方案实验研究了SO2F2、SOF2及SF4的低温吸附与高温解吸附情况。研究结果表明:SO2F2、SOF2、SF4的最佳吸附温度分别为-50℃、-50℃、-40℃,最佳解吸附温度均为30℃;对应的吸附质量分别为956.24μg、3 266.72μg、1 361.40μg,解吸附质量分别为637.69μg、49.40μg、552.14μg。同时,研究了同等条件下对SF6气体的吸附与解吸附情况,得出从SF6中分离SO2F2、SOF2及SF4并将它们从低含量富集到高含量是可行的。In the case of partial discharge in gas insulated station（GIS）, SF6 decomposition products may be produced, and their contents are usually far lower than the content of SF6, thus gas chromatography is hard to test effectively. In order to improve the content of the decomposition products, according to different boiling points and melting points of SF6, SO2F2, SOF2, and SF4, with 2 g absorbent, we designed a scheme of high and low temperature trap, and studied the characteris- tics of adsorption under low temperature and desorption under high temperature for SO2F2, SOF2 and SF4. The optimum adsorption temperatures of SO2F2, SOF2 and SF4 were -50℃, -50 ℃ and-40 ℃, respectively. All of the best desorption temperature was 30 ℃. The corresponding adsorption mass was 956.24 μg, 3 266.72 μg and 1 361.40 μg, respectively, and the desorption mass was 637.69 μg, 49.40 μg, and 552.14μg. At the same time, the adsorption and desorption of SF6 gas under the same conditions was also studied, separation of SO2F2, and the results showed that SOF2, and SF4 derived from the SF6 and concentrating from the low content to higher content was feasible.

关 键 词：局部放电 SF6分解产物 吸附剂 富集分离 高低温冷阱 解析 故障诊断 

分 类 号：TM595[电气工程—电器]