硅基光功率监测技术的最新进展  

Latest advances in silicon-based optical power monitor technologies

作　　者：卫欢[1] 余辉[1] 邵海峰[1] 李霞[1] 李燕[1] 姜建飞[1] 秦晨[1] 叶乔波[1] 江晓清[1] 

机构地区：[1]浙江大学信息电子与工程学院,杭州310000

出　　处：《光通信研究》2015年第6期20-29,共10页Study on Optical Communications

基　　金：国家"九七三"计划资助项目(2013CB632105);国家自然科学基金资助项目(61177055;61307074);浙江省杰出青年科学基金资助项目(LR15F050002);中央高校基本科研业务费专项资金资助项目

摘　　要：随着集成光路复杂度的增加,需要在不影响系统正常工作的情况下,在链路内使用光功率监测器对集成光路进行实时监测,有效地进行器件行为分析。文章综述了硅基光功率监测器的最新研究进展。重点阐述了表面态吸收、双光子吸收、锗吸收以及缺陷态吸收机制下的光功率监测方案以及各自的优缺点,最后详细讨论了利用缺陷态吸收机制实现光电转换的巨大优势。With the increasing complexity of Photonic Integrated Circuits(PICs),it is necessary to carry out their real-time monitoring in links by using the optical power monitor for the effective analysis of the device behavior without affecting the normal operation of the system.This paper summarizes the latest research advances in silicon-based optical power monitors with the emphasis on the optical power monitoring schemes in different absorption mechanisms,such as surface-state,two-photon,Ge and defect-state.and their respective advantages and disadvantages.Finally,it discusses in detail the great superiorities of using the defect-state absorption mechanism for photo-electric conversion.

关 键 词：硅基光电子器件 光功率监测器 光电探测器 

分 类 号：TN256[电子电信—物理电子学]