基于石墨烯的太赫兹器件研究进展  

Progress of terahertz devices based on graphene

作　　者：冯伟[1] 张戎[2] 曹俊诚[2] 

机构地区：[1]江苏大学理学院物理系,镇江212013 [2]中国科学院上海微系统与信息技术研究所,中国科学院太赫兹固态技术重点实验室,上海200050

出　　处：《物理学报》2015年第22期39-47,共9页Acta Physica Sinica

基　　金：国家重点基础研究发展计划(批准号:2014CB339803);国家自然科学基金(批准号:61131006;61321492;61306066);国家重大科学仪器设备开发专项(批准号:2011YQ150021);国家科技重大专项(批准号:2011ZX02707);中国科学院重要方向项目(批准号:YYYJ-1123-1);中国科学院创新团队国际合作伙伴计划:"高迁移率材料工程"创新团队项目;上海市科学技术委员会(批准号:14530711300;13ZR1464600)资助的课题~~

摘　　要：石墨烯是一种零带隙二维的半导体材料,具有极高的载流子迁移率,优异的机械、电学、热学和光学等性能.在太赫兹辐射源、调制器和探测器件的研究中,石墨烯材料具有独特的优势.本文以石墨烯材料在太赫兹辐射源、调制器以及探测器等器件方面的应用为主,综述了石墨烯太赫兹器件的最新研究进展.Graphene has unique electronic properties stemming from a linear gapless carrier energy spectrum, and has dominant advantages in the research of devices such as lasers, detectors and modulators in terahertz region due to its tunable energy gap and extremely high carrier mobility. In this review, we summarize its latest progress in applications of terahertz devices such as lasers, detectors and modulators. Terahertz lasers based on graphene can reach a gain as high as 10^4 cm^-1, and terahertz detectors with different structures such as a bilayer graphene field-effect transistor with top gate and buried gate can achieve NEP （noise equivalent power） ～ nW/Hz. Graphene terahertz modulators, which are equipped with transmission configuration and reflection configuration, can have a very high modulation depth. These results may be helpful for developing the high-efficiency graphene terahertz devices.

关 键 词：太赫兹 石墨烯 太赫兹辐射源 太赫兹探测器 

分 类 号：O441.4[理学—电磁学]