一种用于低功耗LDO的CMOS电压基准设计  

A design on voltage reference used for low-power LDO

作　　者：杨学硕 陆铁军[1] 宗宇[1] 

机构地区：[1]北京微电子技术研究所,北京100076

出　　处：《电子设计工程》2015年第22期98-100,104,共4页Electronic Design Engineering

摘　　要：电压基准是LDO线性稳压器的核心部分,它的精度直接影响到输出电压的精度。本文针对低功耗LDO线性稳压器一方面有较低的静态电流的要求,另一方面又有较高的精度要求,提出了一种简单实用的电压基准电路。本电路采用TSMC 0.18μm混合信号CMOS工艺,仿真结果显示,输出基准电压为1.213 V,静态电流为538 n A,在-55~125℃温度范围内,温度系数仅为10.58 ppm/℃,低频时的电源抑制比为-85 d B。Voltage reference is the core of LDO linear regulator. Its precision decides the accuracy of LDO output voltage directly. Low-power LDO linear regulator needs low-quiescent current on one hand, and high precision on the other hand. Based on the two major requirements, a simple but useful voltage reference is proposed in this paper. The circuit has been implemented in a TSMC 0.18-um mixed-signal CMOS technology. The simulation results show that it can output a steady voltage of 1.213V, and only dissipates 538nA quiescent current. The circuit also achieves a good temperature coefficient of 10.58ppm/oC over the temperature range of -55 ℃ to 125 ℃. And the PSR can be reduced to -85 dB at low frequency.

关 键 词：电压基准 线性稳压器 低静态电流 温度系数 

分 类 号：TN433[电子电信—微电子学与固体电子学]