基于非晶硅电池板的离子液体电沉积法构筑硅锗薄膜  

Construction of Silicon Germanium Films Through Ionic Liquid Electrodeposition Based on Amorphous Silicon Solar Panels

作　　者：林宏宇[1] 刘传东[1] 

机构地区：[1]白城师范学院物理学院,吉林白城137000

出　　处：《白城师范学院学报》2015年第5期19-23,共5页Journal of Baicheng Normal University

基　　金：白城师范学院青年基金课题(2014-28)

摘　　要：采用离子液体电沉积技术,以非晶硅电池板为基片,Si Cl4和Ge Cl4的离子液体Py1.4Tf2N混合溶液作为电解液,利用循环伏安扫描法确定Si、Ge在以非晶硅电池板为基板时共还原电位,完成Si、Ge的共沉积,制备出SiXGe1-x薄膜.并对其电化学沉积机理进行分析.利用X射线衍射仪(XRD)、扫描探针显微镜(SPM)、能量色散光谱仪(EDX)对基板及样品的结构、表面进行了测量和分析.SiXGe1- xfilms were made by means of lonic liquid electrodeposition,and their electrochemical deposition mechanism are analyzed in this paper. In the making process,amorphous silicon solar panels are used as substrates,Py 1. 4 Tf 2N mixed solution from Si Cl and Ge Cl ionic liquids is used as electrolyte,cyclic coltammertry method is used to determine the total reduction potential and to complete the codepostion of Si and Ge.XRD,SPM and EDX are used to measure and analyze the structure and surface of substrates.

关 键 词：非晶硅 电沉积 SiXGe1-x 

分 类 号：TM914.4[电气工程—电力电子与电力传动]