Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE  

作　　者：吕海燕 牟奇 张磊 吕元杰 冀子武 冯志红 徐现刚 郭其新 

机构地区：[1]School of Physics, Shandong University [2]National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute [3]Key Laboratory of Functional Crystal Materials and Device (Ministry of Education), Shandong University [4]Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University

出　　处：《Chinese Physics B》2015年第12期346-351,共6页中国物理B（英文版）

基　　金：Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20120131110006);the Key Science and Technology Program of Shandong Province;China(Grant No.2013GGX10221);the Key Laboratory of Functional Crystal Materials and Device(Shandong University;Ministry of Education);China(Grant No.JG1401);the National Natural Science Foundation of China(Grant No.61306113);the Major Research Plan of the National Natural Science Foundation of China(Grant No.91433112);the Partnership Project for Fundamental Technology Researches of the Ministry of Education;Culture;Sports;Science and Technology;Japan

摘　　要：Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the Ga As substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair（DAP） nor conduction band-acceptor（e–A） emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.Excitation power and temperature-dependent photoluminescence（PL） spectra of the ZnTe epilayer grown on（100）Ga As substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the Ga As substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor–acceptor pair（DAP） nor conduction band-acceptor（e–A） emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal.

关 键 词：PHOTOLUMINESCENCE ZnTe bulk crystal ZnTe epilayer defect or impurity-related emissions 

分 类 号：TN304.054[电子电信—物理电子学]