h-BN掺杂对金刚石晶体结构的影响  

The Effect of h-BN Additive on the Structure of Diamond Crystal

作　　者：李沛航[1] 崔梦男 万玉春[1] 

机构地区：[1]长春理工大学材料科学与工程学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2015年第5期72-75,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省自然基金(20140101052JC)

摘　　要：报道了在Fe70Ni30合金触媒和石墨系体中,掺杂六角立方氮化硼(h-BN)和硼(B)生长金刚石单晶的过程。研究发现,h-BN和B掺杂对于金刚石生长条件及形貌等具有较大的影响,其中h-BN掺杂生长金刚石的最低生长压力达到了6.2 GPa,同时晶体呈绿色条状。说明h-BN和B在金刚石晶体生长以及取代碳原子进入晶格时起到了不同的作用。通过X射线衍射及光电子能谱等表征手段,分析了硼氮对金刚石晶体结构的影响,以及硼氮在金刚石中的化学环境及成键方式。在此基础上阐述了硼氮掺杂的形成机制。In this work,we report the growth process of single crystal diamond by doping boron（B） and hexagonal boron nitride（h-BN） in the system of Fe70Ni30 alloy catalyst and graphite. The doping of B and h-BN has significant effect on the growth condition and morphology of diamonds. The lowest growth pressure of h-BN doped diamond is 6.2Gpa and the crystals have a green strip morphology. This results indicates that B and h-BN have different effects on the diamond growth and have different ways to replace carbon atoms. We analyze the effect of doping B and N atoms on the structure of diamond,and the chemical environment of B and N atoms in diamond by using X-ray diffraction and photoelectron spectroscopy. The mechanism of B and N doped diamond is also demonstrated.

关 键 词：H-BN 金刚石 成键方式 高温高压 

分 类 号：TP391.41[自动化与计算机技术—计算机应用技术]