电子束蒸发制备织构状纳米ZnO∶Al及其光电性能研究  

Transmission and resistivity characteristics of nano-textured ZnO∶Al thin films produced bye-beam deposition

作　　者：王丽军[1] 孙义清[1] 李剑[1] 王小平[1] 

机构地区：[1]上海理工大学理学院,上海200093

出　　处：《功能材料》2015年第21期21085-21088,共4页Journal of Functional Materials

基　　金：上海市教委重点创新资助项目(14ZZ137);沪江基金资助项目(B14004);上海理工大学国家级项目培育基金资助项目(14XPM04)

摘　　要：采用真空电子束蒸发沉积设备在不同温度下（350-400 ℃）直接在玻璃基底上一次性生长400nm厚的织构状纳米掺铝ZnO 薄膜.研究了不同的基底温度对掺铝ZnO 薄膜的结构、电学性质以及光学性质的影响. 研究发现,其光学透过率在390-1100nm的整个波段都超过87%,在580-1100nm光谱范围内光学透过率超过93%. 当沉积温度为380℃时,掺铝ZnO 薄膜的电阻率最低,其值可达1.2×10^-4 Ω·cm.400nm thick nano-textured ZnO∶Al thin films have been directly grown on a glass substrate at different temperatures ranging from 350 to 400 ℃ by using electron beam vapor deposition apparatus and have no post-annealing process.The effects of various substrate temperatures on the structure,electrical properties and optical properties of ZnO∶Al films were investigated.It is found that the optical transmission was over 87%in all the region of 390 to 1 100 nm and over 93%in the region of 580 to 1 100 nm,and the lowest resistivity of1.2×10-4Ω·cm is obtained for ZnO∶Al film deposited at 380 ℃.

关 键 词：掺铝ZnO 电子束蒸发沉积 透明导电薄膜 

分 类 号：TB3[一般工业技术—材料科学与工程]