Characterization of SiC nanowires prepared on C/C composite without catalyst by CVD  

C/C复合材料表面无催化剂CVD制备SiC纳米线的结构表征（英文）

作　　者：葛毅成[1] 刘云启[1] 武帅[1] 吴皇 毛佩林[1] 易茂中[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,长沙410083

出　　处：《Transactions of Nonferrous Metals Society of China》2015年第10期3258-3264,共7页中国有色金属学报（英文版）

基　　金：Project(201206375003)supported by the China Scholarship Council

摘　　要：SiC nanowires were prepared on C/C composite surface without catalyst by chemical vapor deposition（CVD） using CH3 SiCl3 as precursor.SEM images of the CVD-product reveal that some long nanowires have grown to tens of micrometers with some gathered as a ball.Some short nanowires agglomerate like chestnut shell with many thorns accompanied by some deposited nano-particles.XRD,Raman-spectrum and FTIR patterns indicate that the product is a typical β-SiC.TEM images show that the nanowires have a wide diameter range from 10 to 100 nm,and some thin nanowires are bonded to the thick one by amorphous CVD-SiC.A SiC branch generates from an amorphous section of a thick one with an angle of 70° between them,which is consistent with the [111] axis stacking angle of the crystal.SAED and fast Fourier transform（FFT） patterns reveal that the nanowires can grow along with different axes,and the bamboo-nodes section is full of stacking faults and twin crystal.The twisted SiC lattice planes reveal that the screw dislocation growth is the main mechanism for the CVD-SiC nanowires.在无催化剂条件下,以CH3SiCl3为前驱体,采用化学气相沉积技术（CVD）在C/C复合材料表面制备SiC纳米线。SEM形貌表明：CVD产物有大量数十微米长的纳米线,部分纳米线团聚呈球状,同时也发现类似带刺板栗外壳的短纳米线聚集,且纳米颗粒在其表面沉积等现象。XRD、拉曼光谱和红外光谱分析结果表明,此产物为典型的β-SiC。TEM形貌表明,此类纳米线的直径分布范围为10~100 nm,一些较细的纳米线可通过无定形SiC与较粗的纳米线结合在一起。在一根较粗SiC纳米线的无定形区域长出一根与其直径相近的分支,二者之间的夹角为70°,其与β-SiC晶体中[111]轴堆垛夹角一致。SAED和FFT结果表明,纳米线的生长轴线较多,在纳米线的竹节状区域存在大量堆垛层错和孪晶。边缘弯曲的SiC纳米线晶格面表明,螺旋位错生长为其主要的生长机制。

关 键 词：SiC nanowires C/C composite chemical vapor deposition growth mechanism CHARACTERIZATION 

分 类 号：TB383.1[一般工业技术—材料科学与工程] O613.72[理学—无机化学]