Cu掺杂及SPS工艺对Ba_8Ga_(14)Cu_2Si_(30)热电性能的影响  

Thermoelectric property of Ba_8Ga_(14)Cu_2Si_(30)

作　　者：毕山力 刘丽华[1] 栗峰[1] 王镇[2] 潘浩瀚 李阳 

机构地区：[1]北京科技大学数理学院物理系,北京100083 [2]清华大学理学院化学系,北京100084 [3]波多黎各大学工程科学与材料系,美国波多黎各006819044

出　　处：《化工新型材料》2015年第11期123-125,共3页New Chemical Materials

基　　金：国家自然科学基金项目(51072023)

摘　　要：采用电弧炉熔炼、球磨、放电等离子烧结(SPS)的方法合成了名义配比为Ba8Ga16-xCuxSi30(x=0,2)的第I类笼状化合物。研究了Cu对Ga的替代对材料结构以及热电性能的影响。结果表明,相比于Ba8Ga16Si30,Cu的掺杂使得样品的晶格常数减小,热导率降低,Seebeck系数的绝对值增大,ZT值有明显的升高。另外工艺条件的微小变化也对材料结构和性能有影响。The Cu substituted clathrate compound samples with nominal composition of Ba8Ga16-xCuxSi30（x=0,2）were prepared by combining arc melting,ball milling and spark plasma sintering techniques.The crystal structure and thermoelectric properties of Ba8Ga16-xCuxSi30（x=0,2）samples were studied.Compared with Ba8Ga16Si30,the lattice constant of Cu substituted samples decreased,implying that the Cu atoms entered the clathrate lattice.Thermal conductivity decreased and the magnitude of Seebeck coefficient increased with Cu substitution.Consequently,thermoelectric figure of merit ZTsignificantly increased.What＇s more,the small change of synthesis condition will also influence the structure and properties.

关 键 词：Ⅰ类笼状化合物 晶格常数 热电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]