Si_3N_4钝化光电二极管的辐照实验研究  

A Study on the Radiation Effect of Photodiodes Passivated with Chemical Vapor Deposition Silicon Nitride

作　　者：张建新[1] 

机构地区：[1]嘉兴学院机电工程学院,浙江嘉兴314001

出　　处：《嘉兴学院学报》2015年第6期66-69,共4页Journal of Jiaxing University

摘　　要：研究了化学气相淀积Si3N4钝化、Si3N4-SiO2复合钝化对光电二极管抗辐射性能的影响,比较了电子辐照和质子辐照两种类型辐照对器件性能的影响,认为不管是质子辐照还是电子辐照,Si3N4钝化对于可见光部分（400~800nm）影响不大,Si3N4钝化工艺可以应用于光伏产业.The radiation effect of photodiodes passivated with chemical vapor deposition Si3 N4 and Si3 N4-SiO2 has been studied respectively. The effects of electron irradiation and proton irradiation on device performance are compared.It is found that Si3 N4 passivation has little effect on visible light（400 ~800 nm）in spite of electron irradiation or proton irradiation.Si3 N4 passivation process could be applied in the photovoltaic industry.

关 键 词：光电二极管 SI3N4 表面钝化 辐照 

分 类 号：TN36[电子电信—物理电子学]