n-型多孔Si/TiO_2纳米线异质结构的制备及光电化学性能  

Preparation and Photoelectrochemical Properties of n-Type Macroporous Si/TiO_2 Nanowire Heterostructure

作　　者：寇艳强 杨继凯[1] 朱泠西 于长明[1] 

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《高等学校化学学报》2015年第12期2485-2490,共6页Chemical Journal of Chinese Universities

基　　金：国家自然科学基金(批准号:51502023;51502111)资助~~

摘　　要：采用光辅助电化学腐蚀法制备了n-型多孔硅衬底,再采用水热法在其表面生长Ti O_2纳米线制得了三维n-型多孔Si/Ti O_2纳米线异质结构.通过X射线衍射、扫描电子显微镜和X射线能量散射等表征证实了n-型多孔Si/Ti O_2纳米线异质结构的形成.紫外-可见漫反射光谱测试结果表明,n-型多孔硅与Ti O_2纳米线的复合提高了紫外-可见波段的光吸收.光电性能测试结果表明,3个样品中n-型多孔Si/Ti O_2纳米线异质结作为光电极的光电流最高,这说明n-型多孔Si/Ti O_2纳米线作为光电极具有更高的光电化学分解水性能.n-Type macroporous silicon as substrate material was prepared by photo-assisted electrochemical etching. The TiO2 nanowire cover layer on macroporous silicon was prepared by hydrothermal method. Thus, n-type macroporous Si/TiO2 nanowire heterostructure was obtained. The formation of n-type maeroporous Si/ TiO2 nanowire heterostructure was confirmed by X-ray diffraction （XRD）, scanning electron microscope （SEM）, energy dispersive X-ray detector （EDX）. The UV-Vis diffusion reflectance spectra showed that n- type macroporous Si/TiO2 nanowire heterostructure had the strongest absorption among the four tested samples. The photoelectric performance tests showed that n-type macroporous Si/TiO2 nanowire heterostructure had higher photocurrent than the n-type macroporous Si and the n-type Si/TiO2 nanowire. The results showed that n-type macroporous Si/TiO2 nanowire heterostructure as photoanode improved the performance of photoelectro- chemical water splitting.

关 键 词：多孔硅 光阳极 TiO2纳米线 异质结构 

分 类 号：O645[理学—物理化学]