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机构地区:[1]中国科学技术大学电子科学与技术系,合肥230027 [2]中国科学院自动化研究所,北京100190
出 处:《微电子学》2015年第6期747-750,共4页Microelectronics
基 金:中科院A类战略性先导科技专项"面向感知中国的新一代信息技术研究"(XDA06010402)
摘 要:采用SMIC 40nm CMOS工艺,设计了一款采用双路延迟结构和新型延迟单元的高性能全差分环形压控振荡器。仿真结果表明,该VCO电路可实现高振荡频率和宽调谐电压,调节频率范围为5.5~8GHz,控制电压调节范围为0~VDD。谐振频率为6.25GHz时,消耗功耗为4.4mW,相位噪声为-85dBc@1MHz。该VCO可应用于高速IO时钟恢复及频率发生器电路中。A high performance fully differential ring voltage controlled oscillator was designed based on SMIC 40 nm CMOS technology, in which the dual loop delay cells and the new delay cells were used. Simulation results showed that the proposed VCO could achieve high oscillation frequency and large voltage tuning. The frequency tuning range of the VCO was 5.5-8 GHz, and the voltage tuning range of the VCO could achieve nearly 0 toVDD. When the resonant frequency of the VCO was 6.25 GHz, the power consumption was 4 mW and phase noise was-85 dBc@l MHz. The VCO could be used in rapid IO clock recovery circuits and frequency generator circuits.
分 类 号:TN432[电子电信—微电子学与固体电子学]
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