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作 者:Zhishan Yuan Yunfei Chen Zhonghua Ni Yuelin Wang Hong Yi Tie Li
机构地区:[1]School of Mechanical Engineering, Southeast University, Nanjing 210018, China [2]Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, Southeast University, Nanjing 211189, China [3]Science and Technology on Microsystem Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
出 处:《Nano Research》2015年第8期2646-2653,共8页纳米研究(英文版)
基 金:This work was supported by the National Basic Research Program of China (Nos. 2011CB707601, 2011CB707605, and 2012CB934102), the National Science and Technology Supporting Program (No. 2012BAJ11B01), the Creative Research of National Natural Science Foundation of China (No. 61021064), and the National Natural Science Foundation of China (Nos. 60936001, 91123037 and 81201358).
摘 要:An approach for the wafer-level synthesis of size- and site-controlled amorphous silicon nanowires (α-SiNWs) is presented in this paper. Microscale Cu pattern arrays are precisely defined on SiO2 films with the help of photolithography and wet etching. Due to dewetting, Cu atoms shrink to the center of patterns during the annealing process, and react with the SiO2 film to open a diffusion channel for Si atoms to the substrate, α-SiNWs finally grow at the center of Cu patterns, and can be tuned by varying critical factors such as Cu pattern volume, SiO2 thickness, and annealing time. This offers a simple way to synthesize and accurately position a SiNW array on a large area.为控制尺寸、控制地点的非结晶的硅 nanowires 的晶片级的合成的一条途径(-SiNWs) 在这份报纸被介绍。Microscale Cu 模式数组精确在影印石版术并且湿蚀刻的帮助下在 SiO <sub>2</sub> 电影上被定义。由于 dewetting, Cu 原子在退火的过程期间缩小到模式的中心,并且与 SiO <sub>2</sub> 电影反应为 Si 原子打开一条散开隧道到底层。-SiNWs 最后在 Cu 模式,和罐头的中心成长被改变象 Cu 模式体积, SiO <sub>2</sub> 厚度,和退火的时间那样的关键因素调节。这提供一个简单方法综合并且精确地在一个大区域上放一个 SiNW 数组。
关 键 词:amorphous silicon nanowires (α-SiNWs) wafer-leve Cu pattern DEWETTING
分 类 号:TB383[一般工业技术—材料科学与工程] TQ171.719[化学工程—玻璃工业]
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