A flexible magnetoelectric field-effect transistor with magnetically responsive nanohybrid gate dielectric layer  

作　　者：Nguyen Minh Triet Tran Quang Trung Nguyen Thi Dieu Hien Saqib Siddiqui Do-ll Kim Jai Chan Lee Nae-Eung Lee 

机构地区：[1]SchoolofAdvancedMaterialsScienceandEngineering,SungkyunkwanUniversity,Suwon,Kyunggi-do440-746,RepublicofKorea [2]SungkyunkwanUniversity(SKKU)AdvancedInstituteofNanotechnology(SAINT),5ungkyunkwanUniversity,Suwon,Kyunggi-do440-746,RepublicofKorea [3]SamsungAdvancedInstituteforHealthSciencesandTechnology(SAIHST),SungkyunkwanUniversity,Suwon,Kyunggi-do440-746,RepublicofKorea

出　　处：《Nano Research》2015年第10期3421-3429,共9页纳米研究（英文版）

摘　　要：Flexible magnetoelectric （ME） materials have been studied for new applications such as memory, energy harvesters, and magnetic field sensors. Herein, with the widely studied and progressive advantages of ME phenomena in the multiferroic field, we demonstrate a new approach for utilizing flexible ME materials as gate dielectric layers in ME organic field-effect transistors （ME-OFET） that can be used for sensing a magnetic field and extracting the ME properties of the gate dielectric itself. The magnetoelectric nanohybrid gate dielectric layer comprises sandwiched stacks of magnetostrictive CoFe2O4 nanoparticles and a highly piezoelectric poly（vinylidene fluoride-co-trifluoroethylene） layer. While varying the magnetic field applied to the ME gate dielectric, the ME effect in the functional gate dielectric modulates the channel conductance of the ME-OFET owing to a change in the effective gate field. The clear separation of the ME responses in the gate dielectric layer of ME-OFET from those of the other parameters was demonstrated using the AC gate biasing method and enabled the extraction of the ME coefficient of ME materials. Additionally, the device shows high stability after cyclic bending of 10,000 cycles at a banding radius of 1.2 cm. The device has significant potential for not only the extraction of the intrinsic characterization of ME materials but also the sensing of a magnetic field in integrated flexible electronic systems.灵活磁电(我) 材料为象存储器，精力 harvesters，和磁场传感器那样的新应用程序被学习了。此处，与广泛地学习了并且我的进步优点 multiferroic 领域里的现象，我们为利用表明一条新途径灵活我是的材料在我的门电介质层能被用于察觉到一个磁场并且自己提取门电介质的 ME 性质的器官的地效果晶体管( ME-OFET )。磁电的 nanohybrid 门电介质层包括 magnetostrictive CoFe <sub>2</sub 的夹的栈 > O ₄ nanoparticles 并且一高度压电 poly (vinylidene fluoride-co-trifluoroethylene ) 层。当改变磁场适用于时我门电介质，我在功能的门电介质的效果在有效的门领域里由于一个变化调制 ME-OFET 的隧道传导力。在另外的参数的从那些的 ME-OFET 的门电介质层的 ME 回答的清楚的分离用偏导方法的 AC 门被表明并且启用了我的 ME 系数的抽取材料。另外，设备在在 1.2 厘米的 banding 半径的 10,000 个周期的周期的弯曲以后显示出高稳定性。设备为我的内在的描述的抽取有重要潜力不仅材料而且在综合灵活电子系统察觉到一个磁场。

关 键 词：MAGNETOELECTRIC MAGNETOSTRICTION CoFe2O4 nanoparticles P（VDF-TrFE） organic field-effecttransistor magnetic sensor 

分 类 号：TN3[电子电信—物理电子学] O469[理学—凝聚态物理]