A universal etching-free transfer of MoS2 films for applications in photodetectors  

作　　者：Donglin Ma Jianping Shi Qingqing Ji Ke Chen Jianbo Yin Yuanwei Lin Yu Zhang Mengxi Liu Qingliang Feng Xiuju Song Xuefeng Guo Jin Zhang Yanfeng Zhang Zhongfan Liu 

机构地区：[1]Department of Physical Chemistry, College of Chemistry and Molecular Engineering, Peking University, Beijing 700871, China [2]Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100877, China

出　　处：《Nano Research》2015年第11期3662-3672,共11页纳米研究（英文版）

基　　金：Acknowledgements This work was financially supported by the National Natural Science Foundation of China （Nos. 51222201, 51290272, 51472008, and 51432002）, the National Basic Research Program of China （Nos. 2012CB921404, 2013CB932603, 2012CB933404, and 2011CB921903）, and the Foundation for Innovative Research Groups of the National Natural Science Foundation of China （No. 51121091）.

摘　　要：Transferring MoS2 films from growth substrates onto target substrates is a critical issue for their practical applications. Moreover, it remains a great challenge to avoid sample degradation and substrate destruction, because the current transfer method inevitably employs a wet chemical etching process. We developed an etching-free transfer method for transferring MoS2 films onto arbitrary substrates by using ultrasonication. Briefly, the collapse of ultrasonication-generated microbubbles at the interface between polymer-coated MoS2 film and substrates induce sufficient force to delaminate the MoS2 films. Using this method, the MoS2 films can be transferred from all substrates （silica, mica, strontium titanate, and sapphire） and retains the original sample morphology and quality. This method guarantees a simple transfer process and allows the reuse of growth substrates, without involving any hazardous etchants. The etching-free transfer method is likely to promote broad applications of MoS2 in photodetectors.从生长底层转移瞬间 ₂ 电影到目标底层上是为他们的实际应用的一个关键问题。而且，避免样品降级和底层破坏仍然是大挑战，因为当前的转移方法不可避免地采用蚀刻的湿化学药品，处理。我们为由使用 ultrasonication 转移瞬间 ₂ 电影到任意的底层上开发了一个蚀刻免费的转移方法。简短，在在聚合物涂的瞬间 ₂ 之间的接口的产生 ultrasonication 的 microbubbles 的倒塌电影和底层导致足够的力量到 delaminate 瞬间 ₂ 电影。用这个方法，瞬间 ₂ 电影能从所有底层(硅石，云母，锶 titanate，和蓝宝石) 被转移并且保留原来的样品形态学和质量。这个方法保证一个简单转移过程并且允许生长底层的复用，没有包含任何危险蚀刻剂。蚀刻免费的转移方法是可能的在光电探测器支持瞬间 ₂ 的宽广应用程序。

关 键 词：MOS2 etching-free efficient transfer ultrasonic bubbling environmental friendliness 

分 类 号：TQ127.2[化学工程—无机化工] TH117[机械工程—机械设计及理论]