Large-area growth of ultra-high-density single-walled carbon nanotube arrays on sapphire surface  

作　　者：Lixing Kang Yue Hu Hua Zhong Jia Si Shuchen Zhang Qiuchen Zhao Jingjing Lin Qingwen Li Zhiyong Zhang Lianmao Peng Jin Zhang 

机构地区：[1]Division ofAdvanced Nanomaterials, Suzhou Institute of Nanotech and Nanobionics, Chinese Academy of Sciences, Suzhou 215123, China [2]Center for Nanochemistry, Beijing Science and Engineering Technology Research Center for Low Dimensional Carbon Materials, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China [3]University of ChineseAcademy of Sciences, Beijing 100049, China 4 Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China [4]Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, China

出　　处：《Nano Research》2015年第11期3694-3703,共10页纳米研究（英文版）

基　　金：Acknowledgements This work was supported by the National Natural Science Foundation of China （Nos. 21233001, 21129001, 51272006, 51432002, and 51121091）, the National Basic Research Program of China （No. 2011CB932601） and Beijing Municipal Science and Technology Commission （No. D141100000614001）.

摘　　要：A scalable approach to obtaining high-density, large-area single-walled carbon nanotube （SWNT） arrays is essential for realizing the full potential of SWNTs in practical electronic devices; this is still a great challenge. Here, we report an improved synthetic method for large-area growth of ultra-high-density SWNT arrays on sapphire surfaces by combining Trojan catalysts （released from the substrate, to assure ultra-high density） with Mo nanoparticles （loaded on the surface, to stabilize the released Trojan catalysts） as cooperating catalysts. Dense and perfectly aligned SWNTs covered the entire substrate and the local density was as high as 160 tubes/pro. Field-effect transistors （FETs） built on such arrays gave an output current density of -488 μA/μm at the drain-source voltage （Vds） = the gate-source voltage （Vgs） = -2 V, corresponding to an on-conductance per width of 244 μS/μm. These results confirm the wide range of potential applications of Trojan-Mo catalysts in the structure-controlled growth of SWNTs.获得高密度的、大区域的围单人赛的碳 nanotube (SWNT ) 的可伸缩的途径穿的 A 为在实际电子设备认识到 SWNT 的完整的潜力是必要的；这仍然是大挑战。这里，我们由联合特洛伊催化剂在蓝宝石表面上为 ultra-high-density SWNT 数组的大区域的生长报导一个改进合成方法(免除了底层，保证超离频密度) 与瞬间 nanoparticles (在表面上装载了，稳定释放特洛伊催化剂) 作为合作催化剂。稠密、非常排列的 SWNT 盖住全部底层，本地密度象 160 tubes/m 一样高。在如此的数组上造的地效果晶体管(联邦货物税) 在排水管来源电压给了 488 A/m 的产量电流密度(V <sub > ds </sub>)= 门来源电压(V <sub > gs </sub>)=2 V，相应于在传导力上每 244 S/m 的宽度。这些结果在 SWNT 的控制结构的生长证实特洛伊瞬间催化剂的潜在的应用的宽范围。

关 键 词：single-walled carbon nanotube arrays ultra-high density large area cooperating catalysts 

分 类 号：TB383[一般工业技术—材料科学与工程] TP333[自动化与计算机技术—计算机系统结构]