L-天门冬氨酸分子印迹电极的制备与性能研究  

Preparation and Characteristics of a Molecularly Imprinted Electrode for L-Aspartic Acid

作　　者：谷灵燕 申贵隽[1] 赵志伟[1] 

机构地区：[1]大连大学环境与化学工程学院,辽宁大连116622

出　　处：《分析科学学报》2015年第6期797-800,共4页Journal of Analytical Science

基　　金：辽宁省科学计划(No.2013204001)

摘　　要：以邻苯二胺（OPD）为功能单体,L-天门冬氨酸（L-Asp）为模板分子,对L-Asp分子印迹电极的制备与性能进行了研究,建立了一种新的测定L-Asp的电化学分析方法。用循环伏安（CV）法和差分脉冲伏安（DPV）法研究了该电极的电化学性能,结果表明该分子印迹电极对L-Asp分子具有显著的催化还原和选择作用。在pH=5.4的磷酸盐缓冲溶液（PBS）中,还原峰电流与L-Asp的浓度在1.0~50.0mg/L范围内呈良好的线性关系,检出限为0.5mg/L。该方法操作简便,可用于保健品中L-Asp含量的测定。A molecularly imprinted electrode for the determination of L-aspartic acid as prepared with o-phenylenediamine as the functional monomer,L-aspartic acid as the template molecule.By cyclic voltammetry and differential pulse voltammetry method to study the electrochemical properties of the electrode,the results showed that the molecularly imprinted electrode had significant catalytic reduction and selective action for Laspartic acid.In PBS buffer solution with pH=5.4,the reduction peak current showed a good linear relationship with the concentration of L-aspartic acid within 1.0-50.0mg/L,and the minimum detection limit was 0.5mg/L.The method is simple,and can be used for the determination of L-aspartic acid in health care medicine.

关 键 词：L-天门冬氨酸 分子印迹 差分脉冲伏安法 邻苯二胺 

分 类 号：O657.1[理学—分析化学]