高压双向触发二极管工艺改良  

Improvement of technologies of High voltage bidirectional Diode

作　　者：潘英飞 

机构地区：[1]济南市半导体元件实验所,山东济南250014

出　　处：《科技视界》2016年第2期87-88,共2页Science & Technology Vision

摘　　要：高压双向触发二极管是负离子发生器不可缺少的元器件。针对客户在使用过程中反映的各类问题,我们对产品进行了持续改进,以期解决问题,使我们的产品能够达到客户的使用要求。测试结果证明,我们的改进是合理和有效的,各参数性能满足客户使用要求,达到进口产品效果。High voltage bidirectional Diode is essential semiconductor device to anion generator. Customer met some problem during their utilization of the diode. We take some measures to improve the parameters of SIDAC to solve the problem and meet the requirement of customer. The test result prove that the amendment is effective. Improvement activity brings good feedback and can achieve the standard of imported products.

关 键 词：高压双向触发二极管 负离子发生器 

分 类 号：TN31[电子电信—物理电子学]