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作 者:高金凤[1] 徐键[1] 陶卫东[1] 方刚[1] 徐清波[1]
机构地区:[1]宁波大学信息科学与工程学院,宁波大学理学院,浙江宁波315211
出 处:《硅酸盐学报》2015年第12期1765-1771,共7页Journal of The Chinese Ceramic Society
基 金:浙江省自然科学基金(LY12F03001);宁波大学王宽诚幸福基金资助
摘 要:以金属盐和硫脲为原料、水和乙醇的混合液为溶剂,采用溶胶–凝胶滴涂法制备出Cu2Zn Sn S4(CZTS)薄膜。结果表明:所得薄膜为Kesterite相CZTS纳米晶,但含有少量的Sn S2杂质,薄膜中含有大量的CZTS纳米棒,薄膜组成Cu:Zn:Sn:S的元素摩尔比为1.6:1.2:1.0:3.4,为贫铜富锌比例,但存在杂质Cl–,薄膜带宽约为1.56 e V。该薄膜未经硫化,即用于组装CZTS薄膜太阳能电池器件,其结构为钠钙玻璃/ITO/Ti O2或Zn O/Cd S/CZTS/Ag电极,器件中的Ti O2和Zn O均用溶胶–凝胶法制备。器件具有光伏效应,开路电压Uoc为267 m V,短路电流密度Jsc为0.025 m A/cm2,填充因子fF为32%。Sol–gel-derived Cu2ZnSnS4 (CZTS) thin films for low-cost thin-film solar cells were prepared by drop-casting withoutsulfurization, using metal chlorides and thiourea as the precursors in the mixture solvent of deionized water and ethanol. The structureof the sintered films was kesterite phase mixed with few SnS2 nanocrystals. Many nano-rods were contained in the sintered films. Thecompositions of Cu:Zn:Sn:S in the resulting films and also in nanorods were 1.6:1.2:1.0:3.4, correspond to a Zn-rich and Cu poorratio, however, some residual Cl– ions in the films. Optical absorption spectra of the resulting films show that the band gaps werearound 1.56 eV. Furthermore, the device samples of the CZTS thin-film without sulfuration solar cells with the structure(Glass/ITO/TiO2 or ZnO/CdS/CZTS/Ag-electrode) were prepared. In the device samples, sol–gel TiO2 and ZnO thin-films wereprepared by sol–gel solution. The typical current density-voltage (J–V) curves reveals an open circuit voltage of 267 mV, a shortcurrent density of 0.025 mA/cm^2 and a fill factor of 32% for the sol–gel derived CZTS solar cells under light irradiation.
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