大直径重掺硼硅单晶生长工艺研究  

Research of the Process for Heavily Boron-doped Single Crystal Growth

作　　者：韩焕鹏[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2015年第8期5-9,29,共6页Equipment for Electronic Products Manufacturing

摘　　要：在CG6000型单晶炉上,开展了硼掺杂浓度8×1019cm-3以上的150 mm(6英寸)硅单晶生长试验。通过对热场和生长工艺进行优化,抑制了重掺硼硅单晶拉制过程中的严重组分过冷,成功拉制出了电阻率1.5×10-3Ω·cm以下的无位错重掺硼硅单晶,并对单晶拉制过程中的一些工艺参数设定进行了分析和探讨,提高了该类硅单晶生长的效率和成品率。P type monocrystal with boron concentration above of 8×10^19cm^-3 has been growthed with CG6000 CZ furnace. The heavily component melt cooling has been restrained through the modification of hotzone and the optimizing of growth process. We finally got the dislocation-free heavily doped boron crystal with the resistivity below 1.5×10^-3Ω·cm, then reaserch and analyse the procedure of the growth. With all the experiments, we enhance the efficiency and yield of the heavily doped boron crystal.

关 键 词：大直径重掺硼硅单晶 热场改造 工艺参数改进 组分过冷 

分 类 号：TN304.053[电子电信—物理电子学]