锗抛光片清洗工艺研究  

Research on Cleaning Processing of Germanium Polished Wafers

作　　者：郭亚坤[1] 陈晨[1] 田原[1] 范红娜[1] 王云彪[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《电子工业专用设备》2015年第11期36-39,共4页Equipment for Electronic Products Manufacturing

摘　　要：采用紫外线/臭氧技术氧化锗抛光片表面,取代传统的H2O2氧化工艺,之后使用盐酸稀溶液清洗。研究发现当采用波长为253.7 nm和184.9 nm的紫外线光源与臭氧同时作用,并在尽可能靠近锗抛光片表面时,经过30 s的反应时间即可实现对锗抛光片的最佳氧化效果。利用雾值检测对锗抛光片表面质量进行评价,当锗抛光片经过盐酸:H2O=1:50的溶液处理60 s后,可有效地去除抛光片表面的锗氧化物。In this paper, the UV/O3 cleaning technology was used to oxidate the surface of germanium polished wafer instead of the traditional H2O2, then use the HCl/H2Ot to clean the wafer. The UV light with wavelength of 253.7 nm and 184.9 nm and 03 were used simultaneously in UV/O3 cleaning process. The surface of germanium polished wafers were oxidated after 30 s. Haze analysis was adopted to evaluate the germanium surface. It was found that the HCl/H2O volume ratio of 1：50 has a good impact on germanium wafer cleaning, which can remove the germanium oxide, effectively.

关 键 词：紫外线/臭氧 清洗技术 雾值 锗抛光片 

分 类 号：TN305.97[电子电信—物理电子学]