LDMOS场效应管多载波下防失效研究  

Study on Anti- failure of LDMOS FET in Multi- carrier

作　　者：邓友富[1] 吴文状[1] 杨贤松[1] 

机构地区：[1]中国电子科技集团公司第三十六研究所,浙江嘉兴314033

出　　处：《通信对抗》2015年第3期29-31,共3页Communication Countermeasures

摘　　要：为提高LDMOS场效应管在多载波环境下的可靠性,提出了针对多载波特性的功率放大器防失效措施:在功放内部进行峰均比处理和互调产物处理。在一台多载波激励下容易失效的功放单机里采取这种防失效方法,得到了良好的效果,提高了功放的可靠性。To improve the reliability of LDMOS FET in nmlti-carrier environment, an anti-failure way is introduced in this paper according to the characteristic of multi-carrier： treating with the peak-to-average ratio and intermodulaion products. We put this anti-failure method in practise on a power amplifier which is easy-failure in multi-carrier environment, getting a good result and improving the amplifier＇s reliability.

关 键 词：LDMOS场效应管 多载波 峰均比 互调产物 

分 类 号：TN722.75[电子电信—电路与系统]