往复式线切割对单晶硅表面粗糙度的影响  

Influence on Surface Roughness of Single-Crystal Silicon by Reciprocating Wire Cutting Process

作　　者：何健[1,2] 徐中民[1] 宋丽[1] 王劼[1] 王纳秀[1] 

机构地区：[1]中国科学院上海应用物理研究所,上海201800 [2]中国科学院大学,北京100049

出　　处：《材料科学与工程学报》2015年第5期692-696,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(11175243)

摘　　要：为了研究不同尺寸的金刚石颗粒、不同切速比(进给速度与线速度之比值)、金刚线切割时间与不同往复切割次数对晶体色散元件表面粗糙度的影响,主要采用四种不同线径的电镀金刚石线在上述条件下做切割晶面(111)单晶硅分光晶体的实验,并实现在脆性材料单晶硅的塑性区域进行线切割加工。结果表明:在塑性区域加工单晶硅分光晶体的表面粗糙度与金刚石颗粒尺寸成正比、与切速比有密切关系,增加往复切割的次数可以有效降低分光晶体的表面粗糙度。此次研究能够给上海同步辐射光源晶体色散元件加工提供一定的参考价值。To study the surface roughness of single-crystal silicon,four kinds of electroplated diamond wires were used to cut the silicon（111）in the experiment,to see the influence of different sizes of diamond grains,cutting speed ratio（the ratio of feed speed and wire speed）,cutting time and reciprocating cutting times.Based on the above conditions,we can cut brittle material of single-crystal silicon in plastic area.These results prove that surface roughness of single-crystal silicon is directly proportional to the size of diamond particle,and there is a close relationship between roughness and cutting speed ratio.Increasing the times of reciprocating cutting can reduce the surface roughness in the plastic area processing.The study provides a certain reference value for the process of crystal dispersive element in Shanghai Synchrotron Radiation Facility（SSRF）.

关 键 词：金刚石线 色散元件 表面粗糙度 颗粒度 切速比 

分 类 号：TG58[金属学及工艺—金属切削加工及机床] TL99[核科学技术—核技术及应用]