压接型IGBT串联自取能关键技术研究  

A Key Technology Research for Self Energy on IGBTs Series Valve

作　　者：李卫国 赵国亮 蔡博 房萍[2] 

机构地区：[1]国网智能电网研究院,北京102206 [2]北京四方继保自动化股份有限公司,北京100192

出　　处：《电力电子技术》2015年第12期32-34,共3页Power Electronics

摘　　要：基于绝缘栅双极型晶体管(IGBT)串联型电压源换流器具有诸多优点,而且IGBT串联应用的主要优势领域为高压柔性直流输电,故IGBT的驱动保护电路供电方式只有高电位自取能是可行的,即在压接型IGBT'源漏极之间获取电能。从而可知,高电位自取能回路是影响电压均衡的重要因素之一。此处首先提出高电位自取能技术方案,其次,建立IGBT'串联应用条件下的高电位自取能回路约束条件,从而确立所涉及的关键技术。最后提出高电位自取能直流变换器的设计方案,并基于此进行实验研究验证其技术的可行性。Because two-level voltage source converter based on insulated gate bipolar transistor（IGBT） in series con- nection has many advantages and IGBT series will be core component on DC transmission in future power grid, only the high potential of self energy is feasible which is the method of obtaining power from uce of IGBT.It is a proof that voltage fluctuation of IGBT valve is very great and the gate drive requirements for power supply quality is very high. Thus,the high potential of self energy is one of the important factors affecting the IGBT voltage balancing.Scheme of high potential of self energy is proposed.Secondly, constraint conditions of the high potential of self energy in applica- tion of IGBT series is established to ascertain the key technologies involved.The design scheme of DC converter of high potential of self energy is proposed and based on experiment to verify the feasibility of the technology.

关 键 词：绝缘栅双极型晶体管 串联 自取能 

分 类 号：TN32[电子电信—物理电子学]